Least-squares finite element formulation for hydrodynamic modeling of semiconductor devices
Document Type
Article
Publication Date
2-16-2001
Department
Mechanical Engineering
Abstract
A least-squares finite element formulation is presented for the hydrodynamic modeling of semiconductor devices. The formulation results in a symmetric and positive definite algebraic system. Its capability of adopting equal-order interpolations for all unknown variables makes it simple to formulate and easy to program. The semiconductor hydrodynamic equations coupled with the Poisson equation are formulated as one unified equation system in this least-squares finite element scheme. The developed method is examined on 1-D and 2-D deep-submicron semiconductor device structures to demonstrate its capability of handling the large gradients of variables and highly nonlinear source terms in the semiconductor hydrodynamic equations. © 2001 Elsevier Science B.V. All rights reserved.
DOI
10.1016/S0045-7825(00)00350-9
First Page
2875
Last Page
2891
Publication Title
Computer Methods in Applied Mechanics and Engineering
Recommended Citation
Shen, M., Zhoe, T., Cheng, M., & Fithen, R. M. (2001). Least-squares finite element formulation for hydrodynamic modeling of semiconductor devices. Computer Methods in Applied Mechanics and Engineering 190(22-23): 2875-2891. doi: 10.1016/S0045-7825(00)00350-9.